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Bipolar (BJT) Transistor Array PNP 40V 600mA 200MHz 625mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Fairchild Semiconductor | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V | |
Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA | |
Frequency - Transition | 200MHz | |
Current - Collector Cutoff (Max) | 100nA | |
Voltage - Collector Emitter Breakdown (Max) | 40V | |
Current - Collector (Ic) (Max) | 600mA | |
Transistor Type | PNP | |
Power - Max | 625mW | |
Other Names | FAIFSC2N4403TA 2156-2N4403TA |
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