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Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SM6 | |
Base Product Number | HN3C51 | |
Package / Case | SC-74, SOT-457 | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 120V | |
Current - Collector (Ic) (Max) | 100mA | |
Transistor Type | 2 NPN (Dual) | |
Power - Max | 300mW | |
Other Names | HN3C51FGR(TE85LFTR HN3C51F-GR(TE85LF)CT-ND HN3C51F-GR(TE85LF)TR-ND HN3C51F-GR(TE85LFDKR HN3C51F-GR(TE85LF)TR HN3C51F-GR(TE85LFTR HN3C51F-GR(TE85L,F) HN3C51FGR(TE85LFTR-ND HN3C51F-GRTE85LF HN3C51F-GR(TE85LFCT HN3C51F-GR(TE85LF)CT HN3C51F-GR(TE85LF)DKR HN3C51F-GR(TE85LF)DKR-ND |
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