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Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA - 1.5W Through Hole TO-116
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Microchip Technology | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-116 | |
Package / Case | 14-DIP (0.300", 7.62mm) | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 10µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 800mA | |
Transistor Type | 4 NPN (Quad) | |
Power - Max | 1.5W |
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