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SI4100DY-T1-E3
MOSFET N-CH 100V 6.8A 8SO
NOVA Part#:
312-2287830-SI4100DY-T1-E3
Manufacturer:
Manufacturer Part No:
SI4100DY-T1-E3
Standard Package:
2,500
Technical Datasheet:
Available download format
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N-Channel 100 V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4100 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 4.4A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 50 V | |
| Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) | |
| Other Names | SI4100DY-T1-E3DKR SI4100DY-T1-E3TR SI4100DY-T1-E3-ND SI4100DY-T1-E3CT SI4100DYT1E3 |
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