SISS22LDN-T1-GE3

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MOSFET N-CH 60V 25.5A/92.5A PPAK

NOVA Part#:

312-2263323-SISS22LDN-T1-GE3

Manufacturer:

Manufacturer Part No:

SISS22LDN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 60 V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Base Product Number	SISS22
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8S
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	2540 pF @ 30 V
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Other Names	742-SISS22LDN-T1-GE3CT 742-SISS22LDN-T1-GE3TR 742-SISS22LDN-T1-GE3DKR

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