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IPN80R2K4P7ATMA1
MOSFET N-CH 800V 2.5A SOT223
NOVA Part#:
312-2263386-IPN80R2K4P7ATMA1
Manufacturer:
Manufacturer Part No:
IPN80R2K4P7ATMA1
Standard Package:
3,000
Technical Datasheet:
Available download format
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N-Channel 800 V 2.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223 | |
| Base Product Number | IPN80R2 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ P7 | |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-261-4, TO-261AA | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V | |
| Power Dissipation (Max) | 6.3W (Tc) | |
| Other Names | INFINFIPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1-ND IPN80R600P7 IPN80R2K4P7ATMA1CT 2156-IPN80R2K4P7ATMA1 SP001664994 IPN80R2K4P7ATMA1DKR IPN80R2K4P7ATMA1TR |
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