SQ2301ES-T1_GE3

MOSFET P-CH 20V 3.9A TO236
NOVA Part#:
312-2284983-SQ2301ES-T1_GE3
Manufacturer:
Manufacturer Part No:
SQ2301ES-T1_GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 20 V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Supplier Device Package TO-236 (SOT-23)
Base Product Number SQ2301
TechnologyMOSFET (Metal Oxide)
SeriesAutomotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
FET Feature-
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs (Max)±8V
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 10 V
Power Dissipation (Max) 3W (Tc)
Other Names742-SQ2301ES-T1_GE3DKR
742-SQ2301ES-T1_GE3CT
SQ2301ES-T1_GE3CT
742-SQ2301ES-T1_GE3TR
SQ2301ES-T1_GE3TR
SQ2301ES-T1_GE3TR-ND
SQ2301ES-T1_GE3CT-ND

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