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N-Channel 650 V 14A (Tc) 77W (Tc) Through Hole PG-TO247-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3 | |
Base Product Number | IPW65R190 | |
Technology | MOSFET (Metal Oxide) | |
Series | Automotive, AEC-Q101, CoolMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 6.4A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 320µA | |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-247-3 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 650 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1291 pF @ 400 V | |
Power Dissipation (Max) | 77W (Tc) | |
Other Names | SP005398485 448-IPW65R190CFD7AXKSA1 |
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