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FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45 ns 63-BGA (11x9)
Category | Memory | |
Manufacturer | Cypress Semiconductor Corp | |
RoHS | 1 | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 63-BGA (11x9) | |
Series | MS-1 | |
Memory Format | FLASH | |
Memory Size | 4Gb (512M x 8) | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | 45ns | |
Access Time | 45 ns | |
Voltage - Supply | 1.7V ~ 1.95V | |
Package / Case | 63-VFBGA | |
Technology | FLASH - NAND | |
Memory Type | Non-Volatile | |
Other Names | CYPCYPS34MS04G100BHI000 2156-S34MS04G100BHI000 |
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