SIR170DP-T1-RE3

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MOSFET N-CH 100V 23.2A/95A PPAK

NOVA Part#:

312-2280912-SIR170DP-T1-RE3

Manufacturer:

Manufacturer Part No:

SIR170DP-T1-RE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SIR170
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	6195 pF @ 50 V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Other Names	SIR170DP-T1-RE3TR SIR170DP-T1-RE3CT SIR170DP-T1-RE3DKR