SIS435DNT-T1-GE3

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MOSFET P-CH 20V 30A PPAK1212-8

NOVA Part#:

312-2290175-SIS435DNT-T1-GE3

Manufacturer:

Manufacturer Part No:

SIS435DNT-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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P-Channel 20 V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SIS435
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 8 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±8V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	5700 pF @ 10 V
Power Dissipation (Max)	3.7W (Ta), 39W (Tc)
Other Names	SIS435DNT-T1-GE3TR SIS435DNT-T1-GE3DKR SIS435DNT-T1-GE3CT