SI4931DY-T1-E3

MOSFET 2P-CH 12V 6.7A 8-SOIC
NOVA Part#:
303-2361103-SI4931DY-T1-E3
Manufacturer:
Manufacturer Part No:
SI4931DY-T1-E3
Standard Package:
2,500
Technical Datasheet:

Available download format

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-SOIC
Base Product Number SI4931
Package / Case8-SOIC (0.154", 3.90mm Width)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Other NamesSI4931DYT1E3
SI4931DY-T1-E3CT
SI4931DY-T1-E3DKR
SI4931DY-T1-E3TR

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