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N-Channel 25 V 38A (Ta), 200A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount DIRECTFET™ MX
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MX | |
Base Product Number | IRF6717 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 200A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.25mOhm @ 38A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V | |
FET Feature | - | |
Package / Case | DirectFET™ Isometric MX | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 25 V | |
Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 13 V | |
Power Dissipation (Max) | 2.8W (Ta), 96W (Tc) | |
Other Names | IRF6717MTRPBFDKR SP001525458 IRF6717MTRPBF-ND IRF6717MTRPBFCT IRF6717MTRPBFTR |
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