FDD5612

POWER FIELD-EFFECT TRANSISTOR, 1
NOVA Part#:
312-2274716-FDD5612
Manufacturer Part No:
FDD5612
Standard Package:
1
Technical Datasheet:

Available download format

N-Channel 60 V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252AA

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package TO-252AA
TechnologyMOSFET (Metal Oxide)
SeriesPowerTrench®
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
FET Feature-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 30 V
Power Dissipation (Max) 3.8W (Ta), 42W (Tc)
Other Names2156-FDD5612
FAIFSCFDD5612

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