SI2365EDS-T1-GE3

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MOSFET P-CH 20V 5.9A TO236

NOVA Part#:

312-2281491-SI2365EDS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2365EDS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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P-Channel 20 V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2365
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±8V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Other Names	SI2365EDST1GE3 SI2365EDS-T1-GE3TR SI2365EDS-T1-GE3CT SI2365EDS-T1-GE3DKR