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SI8499DB-T2-E1
MOSFET P-CH 20V 16A 6MICRO FOOT
NOVA Part#:
312-2285409-SI8499DB-T2-E1
Manufacturer:
Manufacturer Part No:
SI8499DB-T2-E1
Standard Package:
3,000
Technical Datasheet:
Available download format
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P-Channel 20 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-Micro Foot™ (1.5x1) | |
| Base Product Number | SI8499 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V | |
| FET Feature | - | |
| Package / Case | 6-UFBGA | |
| Vgs (Max) | ±12V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V | |
| Power Dissipation (Max) | 2.77W (Ta), 13W (Tc) | |
| Other Names | SI8499DB-T2-E1DKR SI8499DBT2E1 SI8499DB-T2-E1CT SI8499DB-T2-E1TR |
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