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N-Channel 200 V 3A (Ta) - Surface Mount Die
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | EPC | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -40°C ~ 125°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Technology | GaNFET (Gallium Nitride) | |
Series | eGaN® | |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V | |
FET Feature | - | |
Package / Case | Die | |
Vgs (Max) | +6V, -5V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 200 V | |
Input Capacitance (Ciss) (Max) @ Vds | 145 pF @ 100 V | |
Power Dissipation (Max) | - | |
Other Names | 917-1017-1 917-1017-6 -917-1017-1 917-1017-2 -917-1017-2 |
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