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SI8823EDB-T2-E1
MOSFET P-CH 20V 2.7A 4MICRO FOOT
NOVA Part#:
312-2290038-SI8823EDB-T2-E1
Manufacturer:
Manufacturer Part No:
SI8823EDB-T2-E1
Standard Package:
3,000
Technical Datasheet:
Available download format
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P-Channel 20 V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 4-MICRO FOOT® (0.8x0.8) | |
| Base Product Number | SI8823 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® Gen III | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
| FET Feature | - | |
| Package / Case | 4-XFBGA | |
| Vgs (Max) | ±8V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 10 V | |
| Power Dissipation (Max) | 900mW (Tc) | |
| Other Names | SI8823EDB-T2-E1TR SI8823EDB-T2-E1CT SI8823EDB-T2-E1DKR |
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