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Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A - Surface Mount Die
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | EPC | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Package / Case | Die | |
Series | eGaN® | |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 2mA | |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V | |
FET Feature | GaNFET (Gallium Nitride) | |
FET Type | 2 N-Channel (Half Bridge) | |
Drain to Source Voltage (Vdss) | 60V | |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V | |
Power - Max | - | |
Other Names | 917-EPC2101ENGRDKR 917-EPC2101ENGRCT 917-EPC2101ENGRTR |
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