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RF Transistor NPN 20V 30mA - 350mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - RF | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | BF494 | |
Series | - | |
Noise Figure (dB Typ @ f) | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 67 @ 1mA, 10V | |
Frequency - Transition | - | |
Gain | - | |
Voltage - Collector Emitter Breakdown (Max) | 20V | |
Current - Collector (Ic) (Max) | 30mA | |
Transistor Type | NPN | |
Power - Max | 350mW |
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