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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Panasonic Electronic Components | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Through Hole | |
Supplier Device Package | NS-B1 | |
Base Product Number | UNR411 | |
Series | - | |
Resistor - Base (R1) | 22 kOhms | |
Resistor - Emitter Base (R2) | 22 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
Frequency - Transition | 80 MHz | |
Package / Case | 3-SIP | |
Current - Collector Cutoff (Max) | 500nA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | PNP - Pre-Biased | |
Power - Max | 300 mW | |
Other Names | UNR411200ACT UNR411200ACT-NDR UNR411200ATB UNR411200ATB-NDR UN4112-(TA) |
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