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N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223-4 | |
Base Product Number | BSP149 | |
Technology | MOSFET (Metal Oxide) | |
Series | SIPMOS® | |
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | |
Vgs(th) (Max) @ Id | 1V @ 400µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V | |
FET Feature | Depletion Mode | |
Package / Case | TO-261-4, TO-261AA | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 200 V | |
Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | |
Power Dissipation (Max) | 1.8W (Ta) | |
Other Names | BSP149H6906XTSA1TR BSP149H6906XTSA1CT 2156-BSP149H6906XTSA1 INFINFBSP149H6906XTSA1 SP001058604 BSP149H6906XTSA1DKR |
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