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N-Channel 650 V 30A - Surface Mount Die
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | GaNPower | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Technology | GaNFET (Gallium Nitride) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 30A | |
Drive Voltage (Max Rds On, Min Rds On) | 6V | |
Vgs(th) (Max) @ Id | 1.2V @ 3.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 6 V | |
FET Feature | - | |
Package / Case | Die | |
Vgs (Max) | +7.5V, -12V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 650 V | |
Input Capacitance (Ciss) (Max) @ Vds | 241 pF @ 400 V | |
Power Dissipation (Max) | - | |
Other Names | 4025-GPI65030DFNTR |
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