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RF Transistor PNP 30V 30mA - 200mW Through Hole TO-72
Category | Transistors - Bipolar (BJT) - RF | |
Manufacturer | Microsemi Corporation | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-72 | |
Series | - | |
Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz | |
Package / Case | TO-72-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V | |
Frequency - Transition | - | |
Gain | 25dB | |
Voltage - Collector Emitter Breakdown (Max) | 30V | |
Current - Collector (Ic) (Max) | 30mA | |
Transistor Type | PNP | |
Power - Max | 200mW | |
Other Names | 1086-20991 1086-20991-ND 1086-20991-MIL 150-JAN2N4957 |
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