JAN2N5795

NPN TRANSISTOR
NOVA Part#:
298-2011747-JAN2N5795
Manufacturer Part No:
JAN2N5795
Standard Package:
1

Available download format

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA - 600mW Through Hole TO-78-6

More Information
CategoryTransistors - Bipolar (BJT) - Arrays
ManufacturerMicrochip Technology
RoHS 1
Operating Temperature -65°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-78-6
Package / CaseTO-78-6 Metal Can
SeriesMilitary, MIL-PRF-19500/496
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)10µA (ICBO)
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max) 600mA
Transistor Type2 PNP (Dual)
Power - Max 600mW

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