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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA - 600mW Through Hole TO-78-6
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Microchip Technology | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-78-6 | |
Package / Case | TO-78-6 Metal Can | |
Series | Military, MIL-PRF-19500/496 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 10µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 60V | |
Current - Collector (Ic) (Max) | 600mA | |
Transistor Type | 2 PNP (Dual) | |
Power - Max | 600mW |
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