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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2352844-STGP3NB60KD
IGBT 600V 10A 50W TO220
STMicroelectronics
310-2352845-STGP3NB60K
IGBT 600V 10A 50W TO220
STMicroelectronics
310-2352846-STGB3NB60SDT4
IGBT 600V 6A 70W D2PAK
STMicroelectronics
310-2352847-STGB3NB60KDT4
IGBT 600V 10A 50W D2PAK
STMicroelectronics
310-2352848-STGP7NB60HD
IGBT 600V 14A 80W TO220
STMicroelectronics
310-2352849-STGP12NB60HD
IGBT 600V 30A 125W TO220
STMicroelectronics
310-2352850-SGR2N60UFDTF
IGBT 600V 2.4A 25W DPAK
onsemi
310-2352851-SGW10N60RUFDTM
IGBT 600V 16A 75W D2PAK
onsemi
310-2352852-SGR2N60UFDTM
IGBT 600V 2.4A 25W DPAK
onsemi
310-2352853-HGTP2N120CN
IGBT 1200V 13A 104W TO220AB
onsemi
310-2352854-IRG4RC10SDTRPBF
IGBT 600V 14A 38W DPAK
Infineon Technologies
310-2352855-SGM2N60UFTF
IGBT 600V 2.4A 2.1W SOT-223
onsemi
310-2352856-SGS6N60UFTU
IGBT 600V 6A 22W TO220F
onsemi
310-2352857-SGR20N40LTF
IGBT 400V 45W DPAK
onsemi
310-2352858-SGP23N60UFDTU
IGBT 600V 23A 100W TO220
onsemi
310-2352859-SGH23N60UFDTU
IGBT 600V 23A 100W TO3P
onsemi
310-2352860-SGF40N60UFTU
IGBT 600V 40A 100W TO3PF
onsemi
310-2352862-IRGS10B60KDTRLP
IGBT 600V 22A 156W D2PAK
Infineon Technologies
310-2352863-SGF23N60UFDTU
IGBT 600V 23A 75W TO3PF
onsemi
310-2352865-SGH15N60RUFDTU
IGBT 600V 24A 160W TO3P
onsemi