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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2352982-IXGR72N60A3H1
IGBT 600V 75A 200W ISOPLUS247
IXYS
310-2352983-IXGF30N400
IGBT 4000V 30A 160W I4-PAK
IXYS
310-2352985-SGH80N60UFDTU
IGBT 600V 80A 195W TO3P
onsemi
310-2352986-SGL60N90DG3TU
IGBT 900V 60A 180W TO264
onsemi
310-2352987-FGA50N60LS
IGBT 600V 100A 240W TO3P
onsemi
310-2352988-SGL160N60UFTU
IGBT 600V 160A 250W TO3PF
onsemi
310-2352989-FGA25N120ANTU
IGBT 1200V 40A 310W TO3P
onsemi
310-2352990-FGL60N100DTU
IGBT 1000V 60A 176W TO264
onsemi
310-2352991-HGTG20N60C3D
IGBT 600V 45A 164W TO247
onsemi
310-2352993-SGF5N150UFTU
IGBT 1500V 10A 62.5W TO3PF
onsemi
310-2352995-IRGS4055PBF
IGBT 300V 110A 255W D2PAK
Infineon Technologies
310-2352996-HGT1S20N60A4S9A
IGBT 600V 70A 290W TO263AB
onsemi
310-2352997-IRGS4065PBF
IGBT 300V 70A 178W D2PAK
Infineon Technologies
310-2352998-STGP10NC60K
IGBT 600V 20A 60W TO220
STMicroelectronics
310-2352999-SGH20N60RUFDTU
IGBT 600V 32A 195W TO3P
onsemi
310-2353000-STGW40NC60WD
IGBT 600V 70A 250W TO247
STMicroelectronics
310-2353001-IRGP4055DPBF
IGBT 300V 110A 255W TO247AC
Infineon Technologies
310-2353002-ISL9V5045S3S
IGBT 480V 51A 300W D2PAK
onsemi
310-2353003-IRGP4065DPBF
IGBT 300V 70A 160W TO247AC
Infineon Technologies
310-2353004-STGD6NC60HT4
IGBT 600V 15A 56W DPAK
STMicroelectronics