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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2353593-STGWT20H60DF
IGBT 600V 40A 167W TO3PF
STMicroelectronics
310-2353594-IXGK60N60B2D1
IGBT 600V 75A 500W TO264
IXYS
310-2353595-IGW30N100TFKSA1
IGBT 1000V 60A 412W TO247-3
Infineon Technologies
310-2353597-IXGK35N120CD1
IGBT 1200V 70A 350W PLUS247
IXYS
310-2353598-STGWA40N120KD
IGBT 1200V 80A 240W TO247
STMicroelectronics
310-2353600-IXGK28N140B3H1
IGBT 1400V 60A 300W TO264
IXYS
310-2353601-IXGA30N60C3D4
IGBT 600V 60A 220W TO263
IXYS
310-2353602-NGTB30N60FWG
IGBT 600V 60A 167W TO247
onsemi
310-2353603-NGTB30N120IHRWG
IGBT 1200V 60A 384W TO247
onsemi
310-2353604-NGTB30N120FL2WG
IGBT TRENCH/FS 1200V 60A TO247
onsemi
310-2353605-NGTB40N60FLWG
IGBT 600V 80A 257W TO247
onsemi
310-2353608-IXGK60N60C2D1
IGBT 600V 75A 480W TO264
IXYS
310-2353611-IXGK50N60B2D1
IGBT 600V 75A 400W TO264
IXYS
310-2353614-IXGP12N60CD1
IGBT 600V 24A 100W TO220
IXYS
310-2353615-NGTG30N60FLWG
IGBT 600V 60A 250W TO247
onsemi
310-2353617-IXGP12N60C
IGBT 600V 24A 100W TO220
IXYS
310-2353619-NGTG50N60FWG
IGBT 600V 100A 223W TO247
onsemi
310-2353620-IXGP12N120A2
IGBT 1200V 24A 75W TO220
IXYS
310-2353621-IXGP16N60B2
IGBT 600V 40A 150W TO220
IXYS
310-2353622-RJP5001APP-M0#T2
IGBT 500V TO-220FN
Renesas Electronics America Inc