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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2353564-FGH40T65UPD
IGBT TRENCH/FS 650V 80A TO247-3
onsemi
310-2353566-IXGH40N60B2
IGBT 600V 75A 300W TO247
IXYS
310-2353567-APT50GS60BRDLG
IGBT 600V 93A 415W TO247
Microsemi Corporation
310-2353568-IXGH40N60C2D1
IGBT 600V 75A 300W TO247AD
IXYS
310-2353570-APT50GP60LDLG
IGBT 600V 150A 625W TO264
Microsemi Corporation
310-2353571-IXGH50N60B2
IGBT 600V 75A 400W TO247
IXYS
310-2353573-IHW30N135R3FKSA1
IGBT 1350V 60A 349W TO247-3
Infineon Technologies
310-2353574-IXGH50N60C2
IGBT 600V 75A 400W TO247
IXYS
310-2353576-IHW40N120R3FKSA1
IGBT 1200V 80A 429W TO247-3
Infineon Technologies
310-2353577-IXGH60N60B2
IGBT 600V 75A 500W TO247
IXYS
310-2353578-IXGH72N60B3
IGBT 600V 75A 540W TO247
IXYS
310-2353579-IXGH60N60C2
IGBT 600V 75A 480W TO247AD
IXYS
310-2353580-APT30GP60B2DLG
IGBT 600V 100A 463W TMAX
Microsemi Corporation
310-2353582-IXGH40N60C2
IGBT 600V 75A 300W TO247AD
IXYS
310-2353583-IXBT20N300HV
IGBT 3000V 50A 250W TO268
IXYS
310-2353585-IXGK120N60C2
IGBT 600V 75A 830W TO264
IXYS
310-2353586-STGWA30N120KD
IGBT 1200V 60A 220W TO247
STMicroelectronics
310-2353588-IXGJ40N60C2D1
IGBT 600V 75A 300W TO268
IXYS
310-2353590-IXGK50N90B2D1
IGBT 900V 75A 400W TO264
IXYS
310-2353591-IXGK60N60
IGBT 600V 75A 300W TO264
IXYS