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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2355879-IXGR120N60C2
IGBT 600V 75A 300W ISOPLUS247
IXYS
310-2355880-IRG7PH42UD1-EP
IGBT 1200V 85A COPAK247
Infineon Technologies
310-2355881-IXGQ35N120BD1
IGBT 1200V 75A 400W TO3P
IXYS
310-2355882-IRGS4610DTRRPBF
IGBT 600V 16A 77W D2PAK
Infineon Technologies
310-2355883-IXGR16N170AH1
IGBT 1700V 16A 120W ISOPLUS247
IXYS
310-2355884-NGTB30N120IHLWG
IGBT 1200V 30A TO247
onsemi
310-2355885-IXGP7N60B
IGBT 600V 14A 54W TO220
IXYS
310-2355886-NGTB30N120LWG
IGBT 1200V 30A TO247
onsemi
310-2355887-IXGR32N170H1
IGBT 1700V 38A 200W ISOPLUS247
IXYS
310-2355888-IXGR35N120B
IGBT 1200V 70A 200W ISOPLUS247
IXYS
310-2355889-NGTB30N120IHSWG
IGBT 1200V 30A TO247
onsemi
310-2355890-IXGR35N120BD1
IGBT 1200V 54A 250W ISOPLUS247
IXYS
310-2355891-IXGR32N90B2D1
IGBT 900V 47A 160W ISOPLUS247
IXYS
310-2355892-IRGS4620DTRRPBF
IGBT 600V 32A 140W D2PAK
Infineon Technologies
310-2352536-IRGP4050PBF
IGBT 250V 104A 330W TO247AC
Infineon Technologies
310-2352537-IRG4BC10UPBF
IGBT 600V 8.5A 38W TO220AB
Infineon Technologies
310-2352538-IRG4BH20K-LPBF
IGBT 1200V 11A 60W TO262
Infineon Technologies
310-2352539-IRG4BC10SPBF
IGBT 600V 14A 38W TO220AB
Infineon Technologies
310-2352540-IRG4PSH71UPBF
IGBT 1200V 99A 350W SUPER247
Infineon Technologies
310-2352541-IRG4BC10KPBF
IGBT 600V 9A 38W TO220AB
Infineon Technologies