The store will not work correctly in the case when cookies are disabled.
JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2353652-IRGS4630DTRRPBF
IGBT 600V 47A 206W D2PAK
Infineon Technologies
310-2353654-IXGP7N60CD1
IGBT 600V 14A 75W TO220
IXYS
310-2353656-IXGP30N60B2
IGBT 600V 70A 190W TO220
IXYS
310-2353657-IRGR4607DTRRPBF
IGBT 600V 11A 58W DPAK
Infineon Technologies
310-2353658-IXGP8N100
IGBT 1000V 16A 54W TO220
IXYS
310-2353660-IRGR4610DTRRPBF
IGBT 600V 16A 77W DPAK
Infineon Technologies
310-2353661-IXGQ28N120B
IGBT 1200V 50A 250W TO3P
IXYS
310-2353663-IRGS4607DTRRPBF
IGBT 600V 11A 58W D2PAK
Infineon Technologies
310-2353664-IXGQ28N120BD1
IGBT 1200V 50A 250W TO3P
IXYS
310-2353666-IRGS4620DTRLPBF
IGBT 600V 32A 140W D2PAK
Infineon Technologies
310-2353667-IXGP16N60C2D1
IGBT 600V 40A 150W TO220
IXYS
310-2353669-NGTB25N120FLWG
IGBT 1200V 25A TO247-3
onsemi
310-2353670-IXGQ85N33PCD1
IGBT 330V 85A 150W TO3P
IXYS
310-2353672-NGTB20N60L2TF1G
IGBT 600V 20A TO3PF
onsemi
310-2353673-IXGQ90N27PB
IGBT 270V 90A 150W TO3P
IXYS
310-2353675-IXGQ20N120BD1
IGBT 1200V 40A 190W TO3P
IXYS
310-2353676-NGTB15N135IHRWG
IGBT TRENCH/FS 1350V 30A TO247
onsemi
310-2353678-IXGR32N170AH1
IGBT 1700V 26A 200W ISOPLUS247
IXYS
310-2353679-NGTB20N120IHSWG
IGBT 1200V 20A TO247
onsemi
310-2352980-HGTG12N60B3
IGBT 600V 27A 104W TO247
onsemi