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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2353195-APT33GF120LRDQ2G
IGBT 1200V 64A 357W TO264
Microchip Technology
310-2353196-APT30GT60KRG
IGBT 600V 64A 250W TO220
Microsemi Corporation
310-2353197-APT25GP90BG
IGBT 900V 72A 417W TO247
Microchip Technology
310-2353198-APT35GP120B2DQ2G
IGBT 1200V 96A 543W TMAX
Microchip Technology
310-2353199-APT75GN60B2DQ3G
IGBT 600V 155A 536W TO264
Microsemi Corporation
310-2353200-APT40GP60SG
IGBT 600V 100A 543W D3PAK
Microsemi Corporation
310-2353201-IXGH15N120CD1
IGBT 1200V 30A 150W TO247
IXYS
310-2353208-IXGT4N250C
IGBT 2500V 13A 150W TO268
IXYS
310-2353209-NGD8205NT4G
IGBT 390V 20A 125W DPAK
onsemi
310-2353210-NGTB20N120LWG
IGBT 1200V 40A 192W TO247-3
onsemi
310-2353211-FGPF30N30DTU
IGBT 300V 46W TO220F
onsemi
310-2353212-NGB8202ANT4G
IGBT 440V 20A 150W D2PAK
Littelfuse Inc.
310-2353213-AUIRGP4066D1-E
IGBT 600V 140A 454W TO-247AC
Infineon Technologies
310-2353214-AUIRGP4066D1
IGBT 600V 140A 454W TO-247AC
Infineon Technologies
310-2353215-IXGA50N60C4
IGBT 600V 90A 300W TO263
IXYS
310-2353216-NGTG15N60S1EG
IGBT NPT 600V 30A TO220
onsemi
310-2353217-NGTB15N60EG
IGBT 600V 30A 117W TO220-3
onsemi
310-2353219-NGTB25N120LWG
IGBT 1200V 50A 192W TO247-3
onsemi
310-2353221-IXGH24N60C4
IGBT 600V 56A 190W TO247
IXYS
310-2353222-IXGH24N60C4D1
IGBT 600V 56A 190W TO247
IXYS