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Transistors - IGBTs - Single Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
310-2358912-NCG100F475NF120
IGBT 500V 100A
onsemi
310-2358913-IXGR80N60B
IGBT 600V ISOPLUS247
IXYS
310-2358915-NGTD13T120F2WP
IGBT TRENCH FIELD STOP
onsemi
310-2358916-IXGT24N60C
IGBT 600V 48A 150W TO268
IXYS
310-2358917-AIKQ200N75CP2XKSA1
IGBT TRENCH
Infineon Technologies
310-2358919-IXGT39N60BD1
IGBT 600V 76A 200W TO268
IXYS
310-2358920-NCG225L75NF8M1
IGBT 750V 225A FS4 DIE
onsemi
310-2358922-IXGT31N60D1
IGBT 600V 60A 150W TO268
IXYS
310-2358923-AUXTMGPS4070D2
IGBT TRENCH
Infineon Technologies
310-2358924-AODH6600
IGBT 5A 650V TO252
Alpha & Omega Semiconductor Inc.
310-2358925-SIGC15T60SEX7SA1
IGBT 3 CHIP 600V
Infineon Technologies
310-2358927-IGC08T65U12QX7SA1
IGBT CHIP SMD
Infineon Technologies
310-2358929-IXGX35N120B
IGBT 1200V 70A 350W PLUS247
IXYS
310-2358931-SIGC28T60SEX1SA2
IGBT 3 CHIP 600V
Infineon Technologies
310-2358932-IXGX35N120BD1
IGBT 1200V 70A 350W PLUS247
IXYS
310-2358933-SIGC19T60SEX1SA1
IGBT 3 CHIP 600V
Infineon Technologies
310-2358934-IXGX72N60B3H1
IGBT 600V 75A 540W PLUS247
IXYS
310-2358936-PCRKA16065F8
DIODE EXTREMEFAST 650V 160A
onsemi
310-2358937-IXSH24N60A
IGBT 600V 48A 150W TO247
IXYS
310-2358939-IXSH25N120AU1
IGBT 1200V 50A 200W TO247
IXYS