Transistors - FETs, MOSFETs - RF RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
308-2260009-BLF6G38-50,135
RF FET LDMOS 65V 14DB SOT502A
Ampleon USA Inc.
308-2260010-BLF2045,112
RF FET LDMOS 65V 10DB SOT467C
Ampleon USA Inc.
308-2260011-BSS83,215
MOSFET N-CH 10V 50MA SOT-143B
NXP USA Inc.
308-2260012-BLF542,112
RF FET NCHA 65V 16DB SOT171A
Ampleon USA Inc.
308-2260013-BSS83,235
MOSFET N-CH 10V 50MA SOT143
NXP USA Inc.
308-2260014-BLF6G38-10,118
RF FET LDMOS 65V 14DB SOT975B
Ampleon USA Inc.
308-2260015-BLF3G21-30,112
RF FET LDMOS 65V 13.5DB SOT467C
Ampleon USA Inc.
308-2260016-BLF6G38-10,112
RF FET LDMOS 65V 14DB SOT975B
Ampleon USA Inc.
308-2260017-BF904R,235
MOSFET N-CH 7V 30MA SOT143
NXP USA Inc.
308-2260018-BF904R,215
MOSFET N-CH 7V 30MA SOT143
NXP USA Inc.
308-2260019-BF1214,115
FET RF 6V 400MHZ 6TSSOP
NXP USA Inc.
308-2260020-BF1211,215
MOSFET N-CH DUAL GATE 6V SOT143B
NXP USA Inc.
308-2260021-BF1207,115
FET RF 6V 400MHZ 6TSSOP
NXP USA Inc.
308-2260022-BF1205C,115
FET RF 6V 400MHZ 6TSSOP
NXP USA Inc.
308-2260023-BF1102R,115
FET RF 7V 800MHZ 6TSSOP
NXP USA Inc.
308-2260024-BLF872,112
RF FET LDMOS 65V SOT800
Ampleon USA Inc.
308-2260025-BLF6G27-135,112
RF FET LDMOS 65V SOT502A
Ampleon USA Inc.
308-2260026-BLF175,112
RF FET NCHA 125V 20DB SOT123A
Ampleon USA Inc.
308-2260027-BF909,235
MOSFET N-CH 7V 40MA SOT143
NXP USA Inc.
308-2260028-BF909,215
MOSFET N-CH 7V 40MA SOT143
NXP USA Inc.