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Transistors - Bipolar (BJT) - RF Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
302-2019264-BFS520,135
RF TRANS NPN 15V 9GHZ SOT323-3
NXP USA Inc.
302-2019266-BFG21W,115
RF TRANS NPN 4.5V 18GHZ CMPAK-4
NXP USA Inc.
302-2019267-BFG424F,115
RF TRANS NPN 4.5V 25GHZ 4SO
NXP USA Inc.
302-2019268-BFR520,235
RF TRANS NPN 15V 9GHZ TO236AB
NXP USA Inc.
302-2019269-BFS17,235
RF TRANS NPN 15V 1GHZ TO236AB
NXP USA Inc.
302-2019270-BFR106,215
RF TRANS NPN 15V 5GHZ TO236AB
NXP USA Inc.
302-2019271-BFR92A,235
RF TRANS NPN 15V 5GHZ TO236AB
NXP USA Inc.
302-2019272-BFG591,115
RF TRANS NPN 15V 7GHZ SOT223
NXP USA Inc.
302-2019273-2N5770
RF TRANS NPN 15V TO92-3
onsemi
302-2019274-BFQ591,115
RF TRANS NPN 15V 7GHZ SOT89-3
NXP USA Inc.
302-2019275-BFG310W/XR,115
RF TRANS NPN 6V 14GHZ CMPAK-4
NXP USA Inc.
302-2019276-PBR941,215
RF TRANS NPN 10V 8GHZ TO236AB
NXP USA Inc.
302-2019277-PRF947,115
RF TRANS NPN 10V 8.5GHZ SOT323-3
NXP USA Inc.
302-2019278-BFR93A,235
RF TRANS NPN 12V 6GHZ TO236AB
NXP USA Inc.
302-2019279-ZTX325
RF TRANS NPN 15V 1.3GHZ E-LINE
Diodes Incorporated
302-2019280-FMMT918TA
RF TRANS NPN 15V 600MHZ SOT23-3
Diodes Incorporated
302-2019281-BFS17TA
RF TRANS NPN 15V 1.3GHZ SOT23-3
Diodes Incorporated
302-2019300-FMMT5179TA
RF TRANS NPN 12V 2GHZ SOT23-3
Diodes Incorporated
302-2019322-FMMTH10TA
RF TRANS NPN 25V 650MHZ SOT23-3
Diodes Incorporated
302-2019323-BFS17HTA
RF TRANS NPN 15V 1.3GHZ SOT23-3
Diodes Incorporated