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Diode Silicon Carbide Schottky 1200 V 212A (DC) Through Hole TO-247-2
Category | Diodes - Rectifiers - Single | |
Manufacturer | GeneSiC Semiconductor | |
RoHS | 1 | |
Speed | No Recovery Time > 500mA (Io) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-2 | |
Base Product Number | GC50MPS12 | |
Series | SiC Schottky MPS™ | |
Current - Average Rectified (Io) | 212A (DC) | |
Package / Case | TO-247-2 | |
Operating Temperature - Junction | -55°C ~ 175°C | |
Capacitance @ Vr, F | 3263pF @ 1V, 1MHz | |
Current - Reverse Leakage @ Vr | 40 µA @ 1200 V | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A | |
Diode Type | Silicon Carbide Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Reverse Recovery Time (trr) | 0 ns | |
Other Names | 1242-1340 |
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