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N-Channel 55 V 50W (Tj) Through Hole
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Honeywell Aerospace | |
RoHS | 1 | |
Operating Temperature | - | |
Mounting Type | Through Hole | |
Supplier Device Package | - | |
Base Product Number | HTNFET | |
Technology | MOSFET (Metal Oxide) | |
Series | HTMOS™ | |
Current - Continuous Drain (Id) @ 25°C | - | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V | |
Vgs(th) (Max) @ Id | 2.4V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V | |
FET Feature | - | |
Package / Case | 8-CDIP Exposed Pad | |
Vgs (Max) | 10V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 55 V | |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V | |
Power Dissipation (Max) | 50W (Tj) |
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