IPB025N08N3GATMA1

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MOSFET N-CH 80V 120A D2PAK

NOVA-Teilenummer:

312-2283521-IPB025N08N3GATMA1

Hersteller:

Hersteller-Teile-Nr:

IPB025N08N3GATMA1

Standardpaket:

1,000

Technisches Datenblatt:

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N-Channel 80 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3

More Information
Kategorie	Transistoren – FETs, MOSFETs – einzeln
Hersteller	Infineon Technologies
RoHS	1
Verpackung	Tape & Reel (TR)
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Gerätepaket des Lieferanten	PG-TO263-3
Basisproduktnummer	IPB025
Technologie	MOSFET (Metal Oxide)
Serie	OptiMOS™
Strom – kontinuierlicher Abfluss (Id) bei 25 °C	120A (Tc)
Antriebsspannung (Max. Rds Ein, Min. Rds Ein)	6V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 270µA
Gate-Ladung (Qg) (Max) @ Vgs	206 nC @ 10 V
FET-Funktion	-
Paket/Koffer	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET-Typ	N-Channel
Drain-Source-Spannung (Vdss)	80 V
Eingangskapazität (Ciss) (Max) bei Vds	14200 pF @ 40 V
Verlustleistung (max.)	300W (Tc)
Andere Namen	IPB025N08N3GATMA1CT IPB025N08N3 G-ND IPB025N08N3 GTR-ND IPB025N08N3G IPB025N08N3 GCT IPB025N08N3 GCT-ND IPB025N08N3 GDKR-ND 2156-IPB025N08N3GATMA1 IPB025N08N3GATMA1TR SP000311980 IPB025N08N3 G INFINFIPB025N08N3GATMA1 IPB025N08N3 GDKR IPB025N08N3GATMA1DKR