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IGBT Module - Half Bridge 1700 V 110 A 625 W Chassis Mount Module
Category | Transistors - IGBTs - Modules | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | Module | |
Input | Standard | |
Configuration | Half Bridge | |
Series | - | |
Input Capacitance (Cies) @ Vce | 11 nF @ 25 V | |
NTC Thermistor | No | |
Voltage - Collector Emitter Breakdown (Max) | 1700 V | |
Current - Collector (Ic) (Max) | 110 A | |
Package / Case | Module | |
IGBT Type | - | |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A | |
Power - Max | 625 W | |
Other Names | INFINFBSM75GB170DN2HOSA1 2156-BSM75GB170DN2HOSA1 SP000100464 |
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