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Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A - 20 W Through Hole TO-251 (IPAK)
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-251 (IPAK) | |
Base Product Number | MJD122 | |
Series | - | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V | |
Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 10µA | |
Voltage - Collector Emitter Breakdown (Max) | 100 V | |
Current - Collector (Ic) (Max) | 8 A | |
Transistor Type | NPN - Darlington | |
Power - Max | 20 W | |
Other Names | MJD122-1-ND 497-16183 |
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