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RF Transistor NPN 19V 50mA 1.1GHz 300mW Through Hole 3-SIP
Category | Transistors - Bipolar (BJT) - RF | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | 125°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | 3-SIP | |
Series | - | |
Noise Figure (dB Typ @ f) | - | |
Package / Case | 3-SIP | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 5mA, 10V | |
Frequency - Transition | 1.1GHz | |
Gain | - | |
Voltage - Collector Emitter Breakdown (Max) | 19V | |
Current - Collector (Ic) (Max) | 50mA | |
Transistor Type | NPN | |
Power - Max | 300mW | |
Other Names | 2368-NTE15 |
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