The store will not work correctly in the case when cookies are disabled.
JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
Транзисторы - БТИЗ - Одиночные Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Номер детали производителя
SKU
Описание
Производитель
PDF
Price
310-2353394-IXGV25N250S
IGBT 2500V 60A 250W PLUS220SMD
IXYS
310-2353395-IXDT30N120
IGBT 1200V 60A 300W TO268AA
IXYS
310-2353396-IXDP20N60B
IGBT 600V 32A 140W TO220AB
IXYS
310-2353397-IXGF25N300
IGBT 3000V 27A 114W I4-PAK
IXYS
310-2353398-IXEH40N120
IGBT 1200V 60A 300W TO247AD
IXYS
310-2353399-IXEH40N120D1
IGBT 1200V 60A 300W TO247AD
IXYS
310-2353400-IXER60N120
IGBT 1200V 95A 375W ISOPLUS247
IXYS
310-2353401-IXGA16N60B2
IGBT 600V 40A 150W TO263
IXYS
310-2353402-IXGA16N60B2D1
IGBT 600V 40A 150W TO263
IXYS
310-2353403-IXGA20N100
IGBT 1000V 40A 150W TO263
IXYS
310-2353405-IXGA20N120
IGBT 1200V 40A 150W TO263
IXYS
310-2353407-IXGA7N60C
IGBT 600V 14A 54W TO263
IXYS
310-2353409-IXGA7N60B
IGBT 600V 14A 54W TO263
IXYS
310-2353416-IKD04N60RF
IGBT 600V 8A 75W TO252-3
Infineon Technologies
310-2353418-IXGA16N60C2D1
IGBT 600V 40A 150W TO263
IXYS
310-2353419-IXGH10N300
IGBT 3000V 18A 100W TO247AD
IXYS
310-2353420-IXGA7N60BD1
IGBT 600V 14A 80W TO263
IXYS
310-2353421-IXGF36N300
IGBT 3000V 36A 160W I4-PAK
IXYS
310-2353423-IXGA16N60C2
IGBT 600V 40A 150W TO263
IXYS
310-2353424-RJH60F3DPK-00#T0
IGBT 600V 40A 178.5W TO-3P
Renesas Electronics America Inc