Gree Electric and ChipLink Semiconductor Secure Patents in Silicon Carbide Technology

Recent developments in the silicon carbide (SiC) semiconductor industry have seen two major players, Gree Electric and ChipLink Semiconductor, receiving new utility model patent approvals. These patents reflect ongoing advancements in SiC Schottky semiconductor devices and integrated ultra-barrier rectifiers, crucial for enhancing efficiency in power electronics.

Gree Electric’s Patent: SiC Schottky Semiconductor Device and Manufacturing Method

Gree Electric’s newly granted patent, titled “Silicon Carbide Schottky Semiconductor Device and Manufacturing Method” (Patent No. CN202010940924.5), was officially authorized on February 7, 2025.

Key Innovations:

The device includes a first n-type semiconductor layer, second n-type semiconductor layer, first p-type semiconductor layer, second p-type semiconductor layer, first anode structure, second anode structure, and a cathode layer.

The first anode structure is placed on the second n-type semiconductor layer, while the second anode structure is set on the second p-type semiconductor layer.

The doping concentration of the first n-type layer is higher than that of the second n-type layer, while the doping concentration of the first p-type layer is lower than that of the second p-type layer.

Advantages:

Solves the challenge of simultaneously lowering forward voltage and increasing breakdown voltage in traditional SiC Schottky semiconductor devices.

Reduces forward conduction loss, improves efficiency, and enhances device reliability in high-power applications such as electric vehicles (EVs), renewable energy systems, and industrial automation.

ChipLink Semiconductor’s Patent: SiC Device with Integrated Ultra-Barrier Rectifier

ChipLink Semiconductor has also received approval for its patent titled “Semiconductor Device and Silicon Carbide Device Integrated with Ultra-Barrier Rectifier” (Patent No. CN202421074447.9), also authorized on February 7, 2025.

Key Innovations:

The device integrates a rectification structure within a SiC-based semiconductor architecture to enhance efficiency and reduce component footprint.

The semiconductor device includes:

A substrate.

Multiple first gate dielectric layers and first gate conductive layers for transistor formation.

The first gate conductive layers extend in a primary direction and are arranged sequentially.

Some adjacent first gate conductive layers are interconnected, defining a rectification region.

A second gate dielectric layer and second gate conductive layer form the ultra-barrier rectifier, stacked within the rectification region.

The second gate dielectric layer is thinner and the second gate conductive layer is shorter compared to the first.

Advantages:

Reduces circuit size and minimizes manufacturing costs for high-performance SiC devices.

Enhances rectification efficiency in power electronics applications, especially for EVs, industrial automation, and smart grids.

Industry Impact and Future Outlook

Both patents highlight China’s growing technological advancements in SiC semiconductor devices, further solidifying the country’s position in the global wide-bandgap (WBG) semiconductor industry.

As SiC technology becomes more critical in electric vehicles, renewable energy, and power conversion systems, innovations like these will reduce energy loss, increase efficiency, and lower production costs.

Gree Electric and ChipLink Semiconductor’s latest patents align with China’s strategic push toward semiconductor self-sufficiency, helping the country expand its influence in the global SiC supply chain.