SQJ469EP-T1

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SQJ469EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

NOVA-Teilenummer:

312-2282868-SQJ469EP-T1_GE3

Hersteller:

Hersteller-Teile-Nr:

SQJ469EP-T1_GE3

Standardpaket:

3,000

Technisches Datenblatt:

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P-Channel 80 V 32A (Tc) 100W (Tc) Surface Mount PowerPAK® SO-8

More Information
Kategorie	Transistoren – FETs, MOSFETs – einzeln
Hersteller	Vishay Siliconix
RoHS	1
Verpackung	Tape & Reel (TR)
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Gerätepaket des Lieferanten	PowerPAK® SO-8
Basisproduktnummer	SQJ469
Technologie	MOSFET (Metal Oxide)
Serie	Automotive, AEC-Q101, TrenchFET®
Strom – kontinuierlicher Abfluss (Id) bei 25 °C	32A (Tc)
Antriebsspannung (Max. Rds Ein, Min. Rds Ein)	6V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate-Ladung (Qg) (Max) @ Vgs	155 nC @ 10 V
FET-Funktion	-
Paket/Koffer	PowerPAK® SO-8
Vgs (Max)	±20V
FET-Typ	P-Channel
Drain-Source-Spannung (Vdss)	80 V
Eingangskapazität (Ciss) (Max) bei Vds	5100 pF @ 40 V
Verlustleistung (max.)	100W (Tc)
Andere Namen	SQJ469EP-T1-GE3TR SQJ469EP-T1_GE3TR SQJ469EP-T1-GE3-ND SQJ469EP-T1-GE3TR-ND SQJ469EP-T1_GE3CT SQJ469EP-T1-GE3CT SQJ469EP-T1-GE3CT-ND SQJ469EP-T1-GE3DKR-ND SQJ469EP-T1_GE3DKR SQJ469EP-T1-GE3 SQJ469EP-T1-GE3DKR